• • Achieves down to 1 μm spatial resolution in n-type doping, surpassing physical masking methods and enabling micro- and submicron patterning for high-density integration.
• • Conductivity enhancements up to nine orders of magnitude, exceeding 30 S cm−1 in some systems, with tunability via UV dose and dopant concentration.
• • Thermal stability up to 120°C with activation barrier >28 kcal mol−1, ensuring orthogonal control and compatibility with annealing steps.
• • Reduces contact resistance to one-sixth of original value in organic field-effect transistors, enhancing carrier mobility and lowering surface trap density.