• • TMR exceeding 10^5% at the Fe3GaTe2/α-In2Se3 interface: This value surpasses conventional oxide-based MFTJs by two orders of magnitude, enabling reliable readout with high signal-to-noise ratio for high-density memory arrays.
• • RA product below 1 Ω μm2: This metric is critical for reducing RC delay and power consumption in nanoscale memory cells, directly addressing the kΩ–MΩ μm2 bottleneck of perovskite-based MFTJs.
• • Nonvolatile multistate resistance: The ferroelectric tunable barrier provides stable and reversible multi-resistance states, enhancing data density and reducing power consumption for multi-level memory and logic applications.
• • Low energy barrier for ferroelectric switching: Voltage-driven polarization control is achieved with minimal energy, facilitating low-power operation and fast switching speeds essential for neuromorphic computing and embedded memory.