• • Py-OH-based memristors achieve an ON/OFF ratio of ~10^3.45 (≈2818), enabling reliable multilevel data storage with clear read margins for high-density memory applications.
• • The incorporation of –OH groups reduces operating voltage to low levels (exact value not specified in text but implied), enabling low-power operation critical for energy-constrained edge devices.
• • Py-OH films exhibit excellent retention stability (exact duration not specified), ensuring data nonvolatility over extended periods, essential for long-term storage.
• • The synergistic effects of p-π conjugation, intramolecular hydrogen bonds, and nanofiber morphology suppress stochastic filament overgrowth, improving device-to-device reproducibility and endurance.