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High-performance temperature imaging of Mn4+ doped Rb2Ge4O9 film using the time-resolved intensity ratio method

Authors: Qian Zhang; Zhicheng Liao; Liting Qiu; Min Yin; Yonghu Chen; Xiantao Wei

DOI: 10.1007/s40843-025-3662-4Status: Verified Translated Edition
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Key Findings in This Report

• • The Rb2Ge4O9:0.002 Mn4+ fluorescent film achieves a relative sensitivity of 17.03% K−1 at 330 K in time-resolved thermometry, the highest within the physiological temperature range, enabling precise thermal monitoring in biomedical applications. • • A practical temperature resolution of 0.08 K at 325 K is demonstrated, allowing detection of minute temperature variations critical for microelectronics thermal management. • • The film encapsulated in PDMS exhibits enhanced chemical stability, addressing the degradation issue of bare phosphors in humid or reactive environments, thus extending operational lifetime. • • Temperature imaging of a 20 μm nickel circuit under varying currents reveals clear microstructure and temperature gradients, validating the technique for high-resolution thermal mapping in integrated circuits.