• • The HP/BHJ architecture achieves a PCE of 20.0% in D18/L8-BO binary OSCs, surpassing conventional BHJ and QPHJ devices by a significant margin (exact delta not specified in text).
• • The in situ pore-forming strategy uses an excess of additives to create a nanoporous donor film, increasing D/A interfacial area and enabling three-dimensional exciton dissociation.
• • The layer-by-layer deposition fosters vertical phase separation, ensuring efficient vertical charge transport and collection.
• • The strategy is general: analogous PCE improvements were observed in D18/BTP-eC9-4F and PM6/L8-BO systems, confirming broad applicability.
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