Key Takeaways & Executive Findings
- •• • First successful synthesis of quasi-1D PtSe2 via carrier-gas-assisted CVD, achieving highly oriented crystalline growth along the (110) plane with exceptional thermodynamic stability, enabling scalable production of 1D TMDC structures. • • Quasi-1D multilayer PtSe2 exhibits semimetallic behavior, while 2D few-layer PtSe2 is p-type semiconductor, demonstrating dimension-dependent electronic phase transition critical for device design. • • At 1550 nm, quasi-1D PtSe2 photodetector achieves a maximum negative photoresponse of 194.2 A/W, outperforming the 97.0 A/W positive response of 2D PtSe2, enabling bi-directional photodetection with high sensitivity. • • Temperature-dependent measurements confirm the negative photoresponse originates from a defect-assisted photogating effect, with strength significantly dependent on temperature under high-power illumination, providing a tunable mechanism for infrared detection.
Abstract
One-dimensional (1D) and quasi-1D platinum diselenide (PtSe2) exhibit enhanced quantum confinement and surface effects, leading to distinctive electronic and optical properties. However, efficient synthesis of high-quality quasi-1D PtSe2 with controlled dimensionality and orientation remains challenging. Here, we report the first successful synthesis of quasi-1D PtSe2 via a carrier-gas-assisted chemical vapor deposition (CVD) approach. By optimizing hydrogen concentration, we achieved highly oriented and crystalline quasi-1D PtSe2, which exhibits exceptional thermodynamic stability along the (110) crystal plane. Electrical characterization reveals that 2D few-layer PtSe2 exhibits p-type semiconductor properties, while quasi-1D multilayer PtSe2 displays semimetallic behavior. Due to quantum confinement effects, both materials exhibit similar carrier mobilities. In photodetection at 1550 nm, 2D PtSe2 exhibits conventional positive photoresponse with a maximum responsivity of 97.0 A/W. In contrast, quasi-1D PtSe2 demonstrates unique negative photoresponse, achieving a maximum responsivity of 194.2 A/W, attributed to its semimetallic nature and significant surface traps. Temperature-dependent photoresponse measurements at various power levels further confirm that the negative response originates from a defect-assisted photogating effect, the strength of which exhibits significant temperature dependence under high-power illumination. This work not only fills a gap in the synthesis of 1D PtSe2 but also provides a novel material platform for developing advanced infrared optoelectronic devices.
1. Introduction
One-dimensional (1D) and quasi-1D materials, such as nanowires and nanoribbons, are pivotal for nanoelectronics and photodetection due to their anisotropic geometry and pronounced quantum confinement. Transition metal dichalcogenides (TMDCs) have been synthesized in 1D forms, but conventional top-down methods (mechanical exfoliation, liquid-phase exfoliation) suffer from poor morphology control and low yield, while bottom-up approaches like MBE and CVD face challenges in dimensional and orientation control. PtSe2, a layered TMDC with a CdI2-type structure, exhibits unique electronic properties, but its 1D form has remained elusive, hindering exploration of dimension-dependent phenomena.
This work addresses the bottleneck by introducing a carrier-gas-assisted CVD method that enables the first synthesis of quasi-1D PtSe2 with controlled orientation along the (110) plane. By optimizing hydrogen concentration, we achieve highly crystalline quasi-1D structures that exhibit semimetallic behavior, distinct from the p-type semiconducting 2D few-layer PtSe2. This dimensional control unlocks a novel negative photoresponse at 1550 nm, attributed to defect-assisted photogating, offering a new platform for advanced infrared optoelectronics and bridging the gap in 1D TMDC synthesis.
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Yuxin Wang, Shiyan Zeng, Yuhang Xu, Chao Tan, Guohua Hu, Zegao Wang (2026). Growth of quasi-1D PtSe2 semimetallic nanowire for high-performance bi-directional photodetection. SCIENCE CHINA Materials. https://doi.org/10.1007/s40843-025-3881-y
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Frequently Asked Questions
What is the role of hydrogen concentration in the CVD growth of quasi-1D PtSe2, and how does it affect crystal orientation and morphology?
Hydrogen concentration is critical in the carrier-gas-assisted CVD process. By optimizing hydrogen concentration, we achieved highly oriented and crystalline quasi-1D PtSe2 structures with exceptional thermodynamic stability along the (110) plane. This suggests that hydrogen modulates the growth kinetics, favoring anisotropic growth and orientation control, which is essential for reproducible synthesis.
How does the semimetallic nature of quasi-1D PtSe2 contribute to the negative photoresponse, and what is the underlying mechanism?
The semimetallic nature of quasi-1D PtSe2, combined with significant surface traps, leads to a defect-assisted photogating effect. Under illumination, photogenerated carriers are trapped, modulating the channel conductance negatively, resulting in a negative photoresponse. Temperature-dependent measurements confirm this mechanism, with the effect's strength showing significant temperature dependence under high-power illumination.
What are the key performance metrics of the quasi-1D PtSe2 photodetector compared to 2D PtSe2?
At 1550 nm, the quasi-1D PtSe2 photodetector achieves a maximum negative photoresponse of 194.2 A/W, whereas 2D PtSe2 exhibits a positive photoresponse of 97.0 A/W. This bi-directional photoresponse enables versatile detection capabilities, with quasi-1D showing higher sensitivity due to its semimetallic nature and surface trap effects.
How does the carrier mobility of quasi-1D PtSe2 compare to 2D PtSe2, and what implications does this have for device applications?
Due to quantum confinement effects in the quasi-1D system, both quasi-1D and 2D PtSe2 exhibit similar carrier mobilities. This indicates that the dimensional reduction does not degrade carrier transport, making quasi-1D PtSe2 suitable for high-performance electronic and optoelectronic devices where high mobility is required.
What are the potential scalability and integration challenges for quasi-1D PtSe2 in industrial photodetector applications?
The CVD method demonstrated here is scalable, but achieving uniform orientation and dimension control over large areas remains a challenge. Integration with existing silicon or flexible substrates requires careful transfer processes to avoid damage. However, the high responsivity and bi-directional response offer advantages for advanced infrared detection, potentially offsetting integration costs in niche applications.
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