• • The AHE in SIO/NCO heterostructures is enhanced by an order of magnitude compared to ferrimagnetic NCO single films, directly enabling higher signal-to-noise ratios in spin-orbit torque (SOT) devices and reducing read error rates in magnetic memory.
• • The enhancement is more significant as the SIO sublayer thickness decreases, with large strain exacerbating interfacial charge transfer; this thickness-dependent tuning provides a design parameter for optimizing charge-to-spin conversion efficiency without external magnetic fields.
• • X-ray photoelectron spectroscopy confirms variations in binding energies and concentrations of electronic states, establishing a direct correlation between interfacial charge transfer and AHE enhancement, which is critical for reproducible device fabrication.
• • The AHE arises from the synergistic effect of the intrinsic Berry curvature mechanism and extrinsic impurity scattering, offering a pathway to engineer TMO-based spintronic devices with enhanced reliability and low power consumption.