Defect and Crystal Field Engineering Enables High Efficiency and Anti-Thermal Quenching in Cr3+ Doped Rigid Garnet Phosphors for Multifunctional Optoelectronics
• • LBASO:0.07Cr3+ achieves IQE of 84.82% and EQE of 46.02%, enabling high-efficiency NIR pc-LEDs with reduced energy loss for solid-state lighting.
• • Anti-thermal quenching of 126.03% at 498 K under 442 nm excitation ensures stable emission at elevated temperatures, critical for high-power LED operation.
• • NIR pc-LED delivers 134.99 mW output power and 11.4% photoelectric conversion efficiency at 100 mA, demonstrating practical viability for industrial applications.
• • Chemical unit cosubstitution [Ba2+-Si4+] for [Lu3+-Al3+] in LuAG garnet induces strong crystal field, shifting emission to 705 nm, enabling spectral tuning for specific applications.
Download Full PDF: Defect and Crystal Field Engineering Enables High Efficiency and Anti-Thermal Quenching in Cr3+ Doped Rigid Garnet Phosphors for Multifunctional Optoelectronics | SinoTechIntel | SinoGreenTech