Concentration-Driven Ion Transport Regulated Perovskite Nanocrystal Memristors Enable Reliable Neuromorphic Sensing, Logic Gate Circuits, and Data Security

• • At 4 wt% Cu3SbI6 NC doping, memristors achieve stable bipolar switching with Ron/Roff > 2 × 10^3 and cycling endurance > 700 cycles, enabling reliable bionic nociception and Pavlovian reflex simulation, critical for neuromorphic prosthetics and adaptive learning hardware. • • At 2 wt% NC doping, sparse NCs induce random filament formation, generating true random numbers for encryption keys, providing a hardware root of trust for data security applications. • • Integration of 4 wt% logic gates (AND/OR/XOR/XNOR) with 2 wt% random key generation enables efficient text and image encryption/decryption, demonstrated with ASCII 'world' to ciphertext '#;&80', proving practical data protection. • • The concentration-dependent ion transport modulation (0–15 wt% range) offers a tunable platform for multifunctional memristors, addressing the bottleneck of functional integration in single devices, with potential for edge computing and secure data storage.