• • The MBP SAM molecule achieves a HOMO level of -4.95 eV, closely matching the valence band maximum of tin perovskites, reducing energy band misalignment and enhancing hole extraction efficiency.
• • TRPL and PL measurements show faster hole extraction and reduced non-radiative recombination at the NiOx/MBP interface, leading to higher photoluminescence quantum yield (PLQY) and quasi-Fermi level splitting (QFLS).
• • Contact angle measurements demonstrate super-wettability of the perovskite precursor on NiOx/MBP, enabling the growth of high-quality crystalline films with fewer defects.
• • Devices with NiOx/MBP HTL achieve a champion PCE of 17.6% (as reported in the original paper), with outstanding long-term shelf stability and operational stability under illumination, addressing key commercialization barriers.