• • Supercritical fluid post-treatment reduced defect state density and improved crystallinity and surface uniformity of Ga2O3 films, as evidenced by enhanced performance metrics: responsivity of 111.7 mA/W and specific detectivity of 1.02 × 10^11 Jones under zero bias at 254 nm and 5 μW/cm2 illumination.
• • SAM functionalization at the organic-inorganic heterojunction interface enabled precise modulation of interfacial energy band alignment, promoting efficient separation and transport of photogenerated carriers, critical for self-powered operation.
• • The synergistic combination of SC treatment and SAM functionalization yielded a self-powered photodetector with zero-bias operation, achieving high responsivity and detectivity under weak UV illumination (5 μW/cm2), outperforming many previously reported Ga2O3-based detectors.
• • The approach addresses lattice mismatch issues in all-inorganic p-n heterojunctions by using organic materials, providing a scalable and cost-effective pathway for high-performance solar-blind UV detection.