• • Achieved CIE L* index of 21.39 and cut-off wavelength ≈ 555 nm, demonstrating deep visible-light blocking essential for preventing photoaging and ensuring circuit security in high-power-density packaging.
• • Demonstrated lithographic sensitivity with fine copper line patterning at 40/80 μm line width/spacing, enabling high-density interconnects beyond the ~70 μm limit of subtractive processing.
• • Achieved robust Cu/B-PSPI interfacial adhesion of 16.6 MPa, ensuring mechanical reliability under repeated deformation for flexible electronics.
• • Utilized a main-/side-chain spatial decoupling strategy with precise monomer stoichiometric ratio, resolving the trade-off between UV photosensitivity and visible-light absorption, a critical bottleneck in B-PSPI development.