• • Selective photo-crosslinking creates modulus contrast up to 100 MPa between crosslinked and uncrosslinked regions, enabling pattern mapping with spatial resolution below 50 µm; this eliminates the need for multi-step lithography in flexible electronics.
• • Pattern mapping occurs under tensile strain of 50–200%, with complementary structures forming on the opposite side; the process is reversible over 10 thermal cycles between 25°C and 80°C, with less than 5% pattern fidelity loss, supporting reusable smart labels.
• • Polymer chain migration, quantified by a diffusion coefficient of ~10⁻¹² m²/s at 60°C, drives the mapping; this intrinsic mechanism allows 3D hierarchical patterns to be generated in a single step, reducing fabrication complexity compared to layer-by-layer assembly.
• • The approach achieves 2D ordered patterns with periodicity from 10 µm to 1 mm, and 3D hierarchical features with height variations up to 20 µm; such scalability is compatible with roll-to-roll processing for anti-counterfeiting and soft robotics.
Download Full PDF: Asymmetric deformation-induced pattern mapping in soft materials regulated by selective photo-crosslinking | SinoTechIntel | SinoGreenTech