• • Growth rate of 75 μm/s for single-crystal MoS2 exceeds conventional CVD by orders of magnitude, directly reducing fabrication cycle time and enabling economically viable scale-up for industrial IC production.
• • On-state current of 443.8 μA/μm and mobility of 105.4 cm2/(V s) in MoS2 transistor arrays demonstrate device-grade electronic quality, meeting performance metrics required for sub-1 nm channel nodes.
• • Centimeter-scale single-crystal domains achieved via single-nucleus growth on a 2D liquid-liquid interface eliminate translational grain boundaries that plague stitched CVD films, reducing defect density and improving yield.
• • O2 etching converts polycrystalline MoS2 into a liquid precursor, while molten glass facilitates a 2D liquid film; sulfur vapor triggers in-plane crystallization, enabling precise control over nucleation density and domain competition.