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Prof. PENG Xiaojun

State Key Laboratory of Fine Chemicals, Dalian University of Technology

Research Publications & English Decoded Briefs

Showing 2 publications
SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4202-3

Self-Photooxidation-Restructuring Enables NIR-II Absorption of Carbon Dots for Cancer Phototherapy

Carbon dots (CDs) with absorption in the second near-infrared window (NIR-II, 900-1700 nm) hold promise for tumor theranostics, yet existing synthesis methods often involve complex procedures, harsh conditions, or lack precise control. Here we report a 'self-photooxidation-restructuring' strategy that enables structural reorganization of the carbon core in CDs, achieving a significant redshift of absorption into the NIR-II region. Under ultraviolet (UV) light irradiation, the precursor (B-CDs, absorption in UV region) generates singlet oxygen, which self-oxidizes aldehyde groups and the carbon skeleton of B-CDs to stronger electron-withdrawing carboxyl groups and carbon radicals, respectively. These processes facilitate the formation of new C=C bonds between isolated aromatic domains, thereby transforming B-CDs into novel CDs (N-CDs) characterized by enhanced donor-acceptor interactions and a redshift in absorption toward the NIR-II window. Various experimental data, including high-resolution XPS, FTIR, NMR, EPR, have proved the proposed formation mechanism. The novel N-CDs afforded a high photothermal conversion efficiency of up to 71.33%, which enabled 1064 nm laser-activated photoacoustic imaging (PAI)-guided photothermal therapy (PTT) in tumors. This work opens a new avenue for the synthesis and modulation of CDs in the NIR-II region.

SCIENCE CHINA Materials2026DOI: 10.1007/s40843-026-4220-x

Suppressing Electrode Diffusion via Interfacial Engineering for High-Temperature Memristors

High-temperature electronics demand non-volatile memories (NVMs) capable of stable operation above 500 °C for applications in space exploration, nuclear energy, and autonomous driving. Conventional silicon-based devices fail above ~250 °C, and silicon carbide (SiC) cannot process data above 300 °C. Memristors offer a promising solution due to their simple structure, low power consumption, and scalability. A recent breakthrough by Yang et al. (Science) demonstrated a graphene (Gra)/HfOx/W memristor achieving data retention at 700 °C, with retention time of 50 h, endurance of 10^9 cycles, ON/OFF ratio exceeding three orders of magnitude, and operation voltage ~1.5 V. The key innovation is replacing the Pt bottom electrode with in-situ grown graphene, which suppresses high-temperature diffusion of the W top electrode through the HfOx layer. In contrast, Pt/HfOx/W devices fail after annealing at 800 °C for 10^4 s due to W migration, forming conductive filaments that lock the device in the ON state. High-resolution TEM and EDS reveal tungsten oxide (WOx) formation at the W/HfOx interface in Pt-based devices, while Gra-based devices show no such degradation. STEM-EELS confirms W migration across the HfOx layer in Pt devices, but graphene acts as a diffusion barrier, preserving stable switching behavior. This interfacial engineering approach provides a viable pathway for high-temperature NVM, addressing the critical bottleneck of electrode diffusion.