Synergistic Top-Down Etching Coupled with In Situ Phase Transition: A Strategy for High-Precision Photolithographic Patterning of Perovskite Single Crystals
Perovskite photolithography, an emerging research frontier, combines the unique properties of perovskite materials with lithographic processes for advanced optoelectronic applications. Currently, bottom-up photolithography is preferred due to perovskites’ intrinsic characteristics, while top-down photolithography offers better compatibility with mature semiconductor manufacturing workflows. In this study, we innovatively propose an integrated technology that merges top-down photolithography with in situ phase-transition strategy. Utilizing non-emissive Cs4PbBr6 perovskite single crystals (SCs) as both structural templates and reaction sources, we achieve spatially selective patterning by precise wet and dry etching, followed by inductively coupled plasma (ICP)-induced Cs4PbBr6 to CsPbBr3 phase transition. This process facilitates the direct fabrication of highly emissive CsPbBr3/Cs4PbBr6 microstructure patterns inside Cs4PbBr6 SCs. Such a synergistic approach simplifies perovskite photolithography procedures and enables rapid, large-scale manufacturability. Furthermore, its integration with machine learning optimization algorithms showcases promising application potential in intelligent anti-counterfeiting. This novel approach, integrating perovskite SCs homologous substrate with customized photolithography, provides a new strategy for fabricating high-performance perovskite optoelectronic devices and is expected to promote technological advancement.